Dissertation / PhD Thesis/Book

PreJuSER-37407

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Herstellung und Charakterisierung von GaAs Gunn-Dioden für Anwendungen bei 77 GHz

Stock, J. (Corresponding author)FZJ*

2003
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich

Please use a persistent id in citations: http://hdl.handle.net/2128/261

Report No.: Juel-4069

Abstract: In the present thesis the properties of GaAs Gunn diodes with a hot electron injector have been investigated which are used to generate microwave power e.g. in radar and satellite technology or in intelligent control systems in the field of automotive electronics. The diodes have been characterized using different measurement methods which allow the analysis of the DC curves, the small signal behavior and the second harmonie mode operation in an oscillator. Furthermore the process technology has been developed to fabricate Gunn diode chips with integrated heat sink used in oscillators and coplanar Gunn diodes for small signal measurements. The operation principle of a Gunn diode is based on the so-called Gunn effect which originates from a particular electron scattering process in the conduction band of GaAs. Using a hot electron injector consisting of a linearly graded AlGaAs barrier and an adjacent delta doped layer the scattering process is reinforced and the efficiency of the device is improved. It has been shown that an undoped GaAs spacer layer between the AlGaAs barrier and the delta doped layer can prevent the unintentional diffusion of doping atoms towards the AlGaAs barrier and therefore enhances the effect of the injector. The homogeneity and reproducibility of the fabrication process has been increased compared to existing methods by introducing an etch stop layer for the substrate removal and by using a plasma etching process for the definition of the Gunn diode mesa.

Note: Record converted from VDB: 12.11.2012
Note: Aachen, Techn. Hochsch., Diss., 2003

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)

Research Program(s):

1. Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik (I01)

Appears in the scientific report 2003
Notes: Nachtrag

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